st2305a description st2305a is the p-channel logic enhancement mo de power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. the product is in a very small outline surface mount package. pin configuration sot-23-3l 1.gate 2.source 3.drain part marking sot-23-3l y: year code a: process code ordering information part number package part marking ST2305AS23RG sot-23-3l 05ya process code : a ~ z ; a ~ z ST2305AS23RG s : sot-23-3l ; r : tape reel ; g : pb ? free feature z -15v/-3.5a, r ds(on) = 45m-ohm (typ.) @vgs = -4.5v z -15v/-3.0a, r ds(on) = 55m-ohm @vgs = -2.5v z -15v/-2.0a, rds(on)= 90m-ohm @vgs=-1.8v z super high density cell design for extremely low r ds(on) z exceptional on-resistance and maximum dc current capability z sot-23-3l package design 3 1 2 d g s 3 1 2 05ya product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss -15 v gate-source voltage v gss 12 v continuous drain currenttj=150 ) t a =25 t a =70 i d -3.5 -2.8 a pulsed drain current i dm -10 a continuous source current (diode conduction) i s -1.6 a power dissipation t a =25 t a =70 p d 1.25 0.8 w operation junction temperature t j 150 storgae temperature range t stg -55/150 thermal resistance-j unction to ambient r ja 120 /w st2305a product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -15 v gate threshold voltage v gs(th) v ds =vgs,i d =-250ua -0.3 -1.5 v gate leakage current i gss v ds =0v,v gs = 12v 100 na v ds =-20v,v gs =0v -1 zero gate voltage drain current i dss v ds =-20v,v gs =0v t j =55 -10 ua on-state drain current i d(on) v ds Q -5v,v gs =-4.5v v ds Q -5v,v gs =-2.5v -6 -3 a drain-source on-resistance r ds(on) v gs =-4.5v,i d =-3.5a v gs =-2.5v,i d =-2.0a v gs =-1.8v,i d =-2.0a 0.045 0.055 0.09 forward transconductance g fs v ds =-5v,i d =-3.5v 8.5 s diode forward voltage v sd i s =-1.6a,v gs =0v -0.8 -1.2 v dynamic total gate charge q g 10 12 gate-source charge q gs 2 gate-drain charge q gd v ds =-10v v gs =-4.5v i d ? -3.5a 2 nc input capacitance c iss 485 output capacitance c oss 90 reverse transfer capacitance c rss v ds =-10v v gs =0v f=1mh z 40 pf 10 18 turn-on time t d(on) tr 13 22 18 24 turn-off time t d(off) tf v dd =-10v r l =6 i d =-1.0a v gen =-4.5v r g =6 15 20 ns st2305a product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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